The measurement of the Si lattice parameter by X‐ray interferometry assumes the use of strain‐free crystals, which might not be true because of intrinsic stresses due to surface relaxation, reconstruction and oxidation. X‐ray phase‐contrast topography was used to investigate the strain sensitivity to the finishing, annealing and coating of interferometer crystals. The topography capabilities were assessed by measuring the lattice strain due to films of copper deposited on the interferometer mirror crystal. A by‐product has been the measurement of the surface stresses after complete relaxation of the coatings.

X-ray phase-contrast topography to measure the surface stress and bulk strain in a silicon crystal / Massa, E.; Sasso, C. P.; Fretto, M.; Martino, L.; Mana, G.. - In: JOURNAL OF APPLIED CRYSTALLOGRAPHY. - ISSN 1600-5767. - 53:5(2020), pp. 1195-1202. [10.1107/s1600576720009267]

X-ray phase-contrast topography to measure the surface stress and bulk strain in a silicon crystal

E. Massa
Conceptualization
;
C. P. Sasso
Formal Analysis
;
M. Fretto
Investigation
;
L. Martino
Investigation
;
G. Mana
Supervision
2020

Abstract

The measurement of the Si lattice parameter by X‐ray interferometry assumes the use of strain‐free crystals, which might not be true because of intrinsic stresses due to surface relaxation, reconstruction and oxidation. X‐ray phase‐contrast topography was used to investigate the strain sensitivity to the finishing, annealing and coating of interferometer crystals. The topography capabilities were assessed by measuring the lattice strain due to films of copper deposited on the interferometer mirror crystal. A by‐product has been the measurement of the surface stresses after complete relaxation of the coatings.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/63870
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