It has already been reported that 1/f noise in graphene can be dominated by fluctuations of charge carrier mobility. We show here that the increasing damage induced by oxygen plasma on graphene samples result in two trends: at low doses, the magnitude of the 1/f noise increases with the dose; and at high doses, it decreases with the dose. This behaviour is interpreted in the framework of 1/f noise generated by carrier mobility fluctuations where the concentration of mobility fluctuation centers and the mean free path of the carriers are competing factors. Published by AIP Publishing.

Role of plasma-induced defects in the generation of 1/f noise in graphene / Cultrera, A; Callegaro, L; Marzano, M; Ortolano, M; Amato, G. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 112:9(2018), p. 093504. [10.1063/1.5024218]

Role of plasma-induced defects in the generation of 1/f noise in graphene

Cultrera, A;Callegaro, L;Marzano, M;Amato, G
2018

Abstract

It has already been reported that 1/f noise in graphene can be dominated by fluctuations of charge carrier mobility. We show here that the increasing damage induced by oxygen plasma on graphene samples result in two trends: at low doses, the magnitude of the 1/f noise increases with the dose; and at high doses, it decreases with the dose. This behaviour is interpreted in the framework of 1/f noise generated by carrier mobility fluctuations where the concentration of mobility fluctuation centers and the mean free path of the carriers are competing factors. Published by AIP Publishing.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/67779
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