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EnglishElectrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot region: a pure SiO(2) and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er(3+) ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.
Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides / Ramírez, J M; Berencén, Y; Ferrarese Lupi, F; Navarro-Urrios, D; Anopchenko, A; Tengattini, A; Prtljaga, N; Pavesi, L; Rivallin, P; Fedeli, J M; Garrido, B. - In: OPTICS EXPRESS. - ISSN 1094-4087. - 20:27(2012), p. 28808-18.
| Titolo: | Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides |
| Autori: | |
| Data di pubblicazione: | 2012 |
| Rivista: | |
| Citazione: | Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides / Ramírez, J M; Berencén, Y; Ferrarese Lupi, F; Navarro-Urrios, D; Anopchenko, A; Tengattini, A; Prtljaga, N; Pavesi, L; Rivallin, P; Fedeli, J M; Garrido, B. - In: OPTICS EXPRESS. - ISSN 1094-4087. - 20:27(2012), p. 28808-18. |
| Abstract: | Electrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot region: a pure SiO(2) and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er(3+) ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators. |
| Handle: | http://hdl.handle.net/11696/56973 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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