This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm(3) volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10(14) cm(-3) level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.

Quantification of the Void Volume in Single-Crystal Silicon / D'Agostino, Giancarlo; Di Luzio, Marco; Mana, Giovanni; Martino, LUCA UGO; Oddone, Massimo; Sasso, CARLO PAOLO. - In: ANALYTICAL CHEMISTRY. - ISSN 0003-2700. - 88:23(2016), pp. 11678-11683-11683. [10.1021/acs.analchem.6b03260]

Quantification of the Void Volume in Single-Crystal Silicon

D'AGOSTINO, GIANCARLO;Di Luzio, Marco;MANA, GIOVANNI;MARTINO, LUCA UGO;SASSO, CARLO PAOLO
2016

Abstract

This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm(3) volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10(14) cm(-3) level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/54211
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