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EnglishThis paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm(3) volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10(14) cm(-3) level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.
http://hdl.handle.net/11696/54211| Titolo: | Quantification of the Void Volume in Single-Crystal Silicon |
| Autori: | |
| Data di pubblicazione: | 2016 |
| Rivista: | |
| Abstract: | This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm(3) volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10(14) cm(-3) level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant. |
| Handle: | http://hdl.handle.net/11696/54211 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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