METRICA, l’archivio istituzionale della produzione scientifica dell’Istituto Nazionale di Ricerca Metrologica, ha lo scopo di raccogliere, documentare, conservare e pubblicare, anche ad accesso aperto, i prodotti della ricerca dell’Ente.
METRICA utilizza la piattaforma IRIS (Institutional Research Information System) sviluppata da Cineca.
EnglishThis paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm(3) volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10(14) cm(-3) level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.
Quantification of the Void Volume in Single-Crystal Silicon / D'Agostino, Giancarlo; Di Luzio, Marco; Mana, Giovanni; Martino, Luca Ugo; Oddone, Massimo; Sasso, Carlo Paolo. - In: ANALYTICAL CHEMISTRY. - ISSN 0003-2700. - 88:23(2016), pp. 11678-11683-11683.
| Titolo: | Quantification of the Void Volume in Single-Crystal Silicon | |
| Autori: | ||
| Data di pubblicazione: | 2016 | |
| Rivista: | ||
| Citazione: | Quantification of the Void Volume in Single-Crystal Silicon / D'Agostino, Giancarlo; Di Luzio, Marco; Mana, Giovanni; Martino, Luca Ugo; Oddone, Massimo; Sasso, Carlo Paolo. - In: ANALYTICAL CHEMISTRY. - ISSN 0003-2700. - 88:23(2016), pp. 11678-11683-11683. | |
| Abstract: | This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm(3) volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10(14) cm(-3) level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant. | |
| Handle: | http://hdl.handle.net/11696/54211 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 2016 dagostino voids.pdf | Versione editoriale | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia | |
| Manuscript file.pdf | Documento in Post-print | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11696/54211
Copyright © 2021