Transition-edge sensors (TESs) have shown the capability of both energy resolution and resolving photon numbers. In this work, we present the fabrication and characterization of high detection efficiency Ti optical TESs with the critical temperature Tc = 213 mK and the photon-number resolving capability at telecommunication wavelength 1550 nm. The Ti superconducting film is prepared by a DC magnetron sputtering technique. An optical cavity comprised of 5-layers antireflection and 15-layers high-reflection Ta2O5/SiO2 is enclosed with the Ti film by an ion beam assisted deposition method to improve detection efficiency, which brings the absorption of 99.74%. The energy resolution for the Ti TES with sensitive area 20 μm × 20 μm is 0.45 eV and the detection efficiency is 97% ± 1%.
Development of High Detection Efficiency Titanium Transition-Edge Sensors for 1550 nm Single-Photon Detection / Xu, Xiaolong; Li, Peizhan; Pepe, Carlo; Chen, Jian; Li, Jinjin; Zhang, Wen; Rajteri, Mauro; Brida, Giorgio; Gao, Huifang; Li, Xu; Liu, Zheng; Gao, Ying; Wang, Xueshen. - In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY. - ISSN 1051-8223. - 36:5(2026), pp. 1-4. [10.1109/tasc.2025.3649410]
Development of High Detection Efficiency Titanium Transition-Edge Sensors for 1550 nm Single-Photon Detection
Pepe, Carlo;Rajteri, Mauro;Brida, Giorgio;
2026
Abstract
Transition-edge sensors (TESs) have shown the capability of both energy resolution and resolving photon numbers. In this work, we present the fabrication and characterization of high detection efficiency Ti optical TESs with the critical temperature Tc = 213 mK and the photon-number resolving capability at telecommunication wavelength 1550 nm. The Ti superconducting film is prepared by a DC magnetron sputtering technique. An optical cavity comprised of 5-layers antireflection and 15-layers high-reflection Ta2O5/SiO2 is enclosed with the Ti film by an ion beam assisted deposition method to improve detection efficiency, which brings the absorption of 99.74%. The energy resolution for the Ti TES with sensitive area 20 μm × 20 μm is 0.45 eV and the detection efficiency is 97% ± 1%.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
