The recent demonstration of optically active telecom emitters in silicon has paved the way for realizing industrial-scale silicon-based solid-state quantum photonic platforms. The scientific community has been pursuing the implementation of novel single-photon devices for quantum technology applications by introducing extrinsic impurities inside the silicon lattice upon ion implantation. Here we report the optical characterization through single-photon microscopy of intrinsic W centers in high-purity silicon substrates upon carbon implantation and subsequent rapid thermal annealing. The photoluminescence investigation of their emission properties at cryogenic temperatures allowed us to identify the effects of the post-implantation thermal treatment in the formation of telecom quantum emitters based on interstitial silicon clusters upon the introduction of an extrinsic atomic species.
Study of W centers formation in silicon upon ion implantation and rapid thermal annealing / Andrini, G.; Zanelli, G.; Tchernij, S. Ditalia; Corte, E.; Hernandez, E. Nieto; Verna, A.; Cocuzza, M.; Bernardi, E.; Virzi, S.; Traina, P.; Degiovanni, I. P.; Olivero, P.; Genovese, M.; Forneris, J.. - (2023). [10.1109/sum57928.2023.10224442]
Study of W centers formation in silicon upon ion implantation and rapid thermal annealing
Andrini, G.;Zanelli, G.;Corte, E.;Verna, A.;Cocuzza, M.;Bernardi, E.;Traina, P.;Degiovanni, I. P.;Olivero, P.;Genovese, M.;Forneris, J.
2023
Abstract
The recent demonstration of optically active telecom emitters in silicon has paved the way for realizing industrial-scale silicon-based solid-state quantum photonic platforms. The scientific community has been pursuing the implementation of novel single-photon devices for quantum technology applications by introducing extrinsic impurities inside the silicon lattice upon ion implantation. Here we report the optical characterization through single-photon microscopy of intrinsic W centers in high-purity silicon substrates upon carbon implantation and subsequent rapid thermal annealing. The photoluminescence investigation of their emission properties at cryogenic temperatures allowed us to identify the effects of the post-implantation thermal treatment in the formation of telecom quantum emitters based on interstitial silicon clusters upon the introduction of an extrinsic atomic species.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
