Memristive devices based on the resistive switching mechanism are continuously attracting attention in the framework of neuromorphic computing and next-generation memory devices. Here, we report on a comprehensive analysis of the resistive switching properties of amorphous NbOx grown by anodic oxidation. Besides a detailed chemical, structural and morphological analysis of the involved materials and interfaces, the mechanism of switching in Nb/NbOx/Au resistive switching cells is discussed by investigating the role of metal-metal oxide interfaces in regulating electronic and ionic transport mechanisms. The resistive switching was found to be related to the formation/rupture of conductive nanofilaments in the NbOx layer under the action of an applied electric field, facilitated by the presence of an oxygen scavenger layer at the Nb/NbOx interface. Electrical characterization including device-to-device variability revealed an endurance >10(3) full-sweep cycles, retention >10(4) s, and multilevel capabilities. Furthermore, the observation of quantized conductance supports the physical mechanism of switching based on the formation of atomic-scale conductive filaments. Besides providing new insights into the switching properties of NbOx, this work also highlights the perspective of anodic oxidation as a promising method for the realization of resistive switching cells.

Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation / Leonetti, Giuseppe; Fretto, Matteo; Bejtka, Katarzyna; Olivetti, Elena Sonia; Pirri, Fabrizio Candido; De Leo, Natascia; Valov, Ilia; Milano, Gianluca. - In: PHYSICAL CHEMISTRY CHEMICAL PHYSICS. - ISSN 1463-9076. - 25:21(2023), pp. 14766-14777. [10.1039/d3cp01160g]

Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation

Leonetti, Giuseppe;Fretto, Matteo;Olivetti, Elena Sonia;Pirri, Fabrizio Candido;De Leo, Natascia;Milano, Gianluca
2023

Abstract

Memristive devices based on the resistive switching mechanism are continuously attracting attention in the framework of neuromorphic computing and next-generation memory devices. Here, we report on a comprehensive analysis of the resistive switching properties of amorphous NbOx grown by anodic oxidation. Besides a detailed chemical, structural and morphological analysis of the involved materials and interfaces, the mechanism of switching in Nb/NbOx/Au resistive switching cells is discussed by investigating the role of metal-metal oxide interfaces in regulating electronic and ionic transport mechanisms. The resistive switching was found to be related to the formation/rupture of conductive nanofilaments in the NbOx layer under the action of an applied electric field, facilitated by the presence of an oxygen scavenger layer at the Nb/NbOx interface. Electrical characterization including device-to-device variability revealed an endurance >10(3) full-sweep cycles, retention >10(4) s, and multilevel capabilities. Furthermore, the observation of quantized conductance supports the physical mechanism of switching based on the formation of atomic-scale conductive filaments. Besides providing new insights into the switching properties of NbOx, this work also highlights the perspective of anodic oxidation as a promising method for the realization of resistive switching cells.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/79939
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