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EnglishThe measurement of the lattice-parameter of silicon by x-ray interferometry assumes the use of strain-free crystals. This might not be the case because surface relaxation, reconstruction, and oxidation cause strains without the application of any external force. In a previous work, this intrinsic strain was estimated by a finite element analysis, where the surface stress was modeled by an elastic membrane having a 1 N m(-1) tensile strength. The present paper quantifies the surface stress by a density functional theory calculation. We found a value exceeding the nominal value used, which potentially affects the measurement accuracy.
Density functional theory calculations of the stress of oxidised (1 1 0) silicon surfaces / Melis, C; Giordano, S; Colombo, L; Mana, G. - In: METROLOGIA. - ISSN 0026-1394. - 53:6(2016), pp. 1339-1345. [10.1088/0026-1394/53/6/1339]
| Titolo: | Density functional theory calculations of the stress of oxidised (1 1 0) silicon surfaces | |
| Autori: | ||
| Data di pubblicazione: | 2016 | |
| Rivista: | METROLOGIA | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/0026-1394/53/6/1339 | |
| Abstract: | The measurement of the lattice-parameter of silicon by x-ray interferometry assumes the use of st...rain-free crystals. This might not be the case because surface relaxation, reconstruction, and oxidation cause strains without the application of any external force. In a previous work, this intrinsic strain was estimated by a finite element analysis, where the surface stress was modeled by an elastic membrane having a 1 N m(-1) tensile strength. The present paper quantifies the surface stress by a density functional theory calculation. We found a value exceeding the nominal value used, which potentially affects the measurement accuracy. | |
| Full-text (pubblici): | partially_open | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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| 2016 Metrologia surface stress SiO2-Si.pdf | Versione editoriale | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia | |
| UNICA_surface_stress_SiO2_20161003.pdf | Documento in Pre-print | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11696/67788
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