Density functional theory calculations of the stress of oxidised (1 1 0) silicon surfaces

Melis, C; Giordano, S; Colombo, L; Mana, G

doi:10.1088/0026-1394/53/6/1339

The measurement of the lattice-parameter of silicon by x-ray interferometry assumes the use of strain-free crystals. This might not be the case because surface relaxation, reconstruction, and oxidation cause strains without the application of any external force. In a previous work, this intrinsic strain was estimated by a finite element analysis, where the surface stress was modeled by an elastic membrane having a 1 N m(-1) tensile strength. The present paper quantifies the surface stress by a density functional theory calculation. We found a value exceeding the nominal value used, which potentially affects the measurement accuracy.

Density functional theory calculations of the stress of oxidised (1 1 0) silicon surfaces / Melis, C; Giordano, S; Colombo, L; Mana, G. - In: METROLOGIA. - ISSN 0026-1394. - 53:6(2016), pp. 1339-1345.

Titolo:	Density functional theory calculations of the stress of oxidised (1 1 0) silicon surfaces
Autori:	Melis, C [Methodology] Giordano, S [Validation] Colombo, L [Supervision] MANA, GIOVANNI [Writing – Original Draft Preparation] (Corresponding) mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2016
Rivista:	METROLOGIA
Citazione:	Density functional theory calculations of the stress of oxidised (1 1 0) silicon surfaces / Melis, C; Giordano, S; Colombo, L; Mana, G. - In: METROLOGIA. - ISSN 0026-1394. - 53:6(2016), pp. 1339-1345.
Handle:	http://hdl.handle.net/11696/67788
Appare nelle tipologie:	1.1 Articolo in rivista

File in questo prodotto:

File	Descrizione	Tipologia	Licenza
2016 Metrologia surface stress SiO2-Si.pdf		Versione editoriale	Non Pubblico - Accesso privato/ristretto	Administrator Richiedi una copia
UNICA_surface_stress_SiO2_20161003.pdf		Documento in Pre-print	PUBBLICO - Tutti i diritti riservati	Visibile a tuttiVisualizza/Apri

Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11696/67788

Citazioni

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.