We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as a parts per thousand 2.8 x 10(15)cm-2 in the active channel of the devices. We report a reversible modulation of the superconducting transition temperature (either positive or negative depending on the sign of the gate voltage) whose magnitude and sign are incompatible with the confinement of the perturbed superconducting state to a thin surface layer, as would be expected within a naAA +/- ve screening model.

Superconducting Transition Temperature Modulation in NbN via EDL Gating / Piatti, E.; Sola, A.; Daghero, D.; Ummarino, G. A.; Laviano, F.; Nair, J. R.; Gerbaldi, C.; Cristiano, R.; Casaburi, A.; Gonnelli, R. S.. - In: JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM. - ISSN 1557-1939. - 29:3(2015), pp. 587-591. [10.1007/s10948-015-3306-0]

Superconducting Transition Temperature Modulation in NbN via EDL Gating

Sola, A.;
2015

Abstract

We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as a parts per thousand 2.8 x 10(15)cm-2 in the active channel of the devices. We report a reversible modulation of the superconducting transition temperature (either positive or negative depending on the sign of the gate voltage) whose magnitude and sign are incompatible with the confinement of the perturbed superconducting state to a thin surface layer, as would be expected within a naAA +/- ve screening model.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/65504
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