We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558nm and of intense bands in the 600-750nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600-670nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.

Fluorine-based color centers in diamond / Ditalia Tchernij, S., Lühmann, T., Corte, E., Sardi, F., Picollo, F., Traina, P., Brajković, M., Crnjac, A., Pezzagna, S., Pastuović, Ž., Degiovanni, I.P., Moreva, E., Aprà, P., Olivero, P., Siketić, Z., Meijer, J., Genovese, M., Forneris, J.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 10:1(2020), p. 21537. [10.1038/s41598-020-78436-6]

Fluorine-based color centers in diamond

Traina, P.;Degiovanni, I. P.;Moreva, E.;Olivero, P.;Genovese, M.;
2020

Abstract

We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558nm and of intense bands in the 600-750nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600-670nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/65257
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