Future measurements of the silicon lattice-parameter by combined X-ray and optical interferometry require displacement measurements having 10 -9 relative accuracy. Experimental and numerical investigations are under way to bring into light the limiting factors, excluding or identifying and eliminating them.
Laser interferometry in the Si lattice-parameter measurement / Massa, E.; Mana, G.. - (2012), pp. 352-353. (Intervento presentato al convegno 2012 Conference on Precision electromagnetic Measurements) [10.1109/CPEM.2012.6250947].
Laser interferometry in the Si lattice-parameter measurement
Massa, E.
;Mana, G.
2012
Abstract
Future measurements of the silicon lattice-parameter by combined X-ray and optical interferometry require displacement measurements having 10 -9 relative accuracy. Experimental and numerical investigations are under way to bring into light the limiting factors, excluding or identifying and eliminating them.File in questo prodotto:
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