Future measurements of the silicon lattice-parameter by combined X-ray and optical interferometry require displacement measurements having 10 -9 relative accuracy. Experimental and numerical investigations are under way to bring into light the limiting factors, excluding or identifying and eliminating them.

Laser interferometry in the Si lattice-parameter measurement / Massa, E.; Mana, G.. - (2012), pp. 352-353. (Intervento presentato al convegno 2012 Conference on Precision electromagnetic Measurements) [10.1109/CPEM.2012.6250947].

Laser interferometry in the Si lattice-parameter measurement

Massa, E.
;
Mana, G.
2012

Abstract

Future measurements of the silicon lattice-parameter by combined X-ray and optical interferometry require displacement measurements having 10 -9 relative accuracy. Experimental and numerical investigations are under way to bring into light the limiting factors, excluding or identifying and eliminating them.
2012
2012 Conference on Precision electromagnetic Measurements
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/64968
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