As a consequence of the redefinition of the International System of Units (SI), where units are defined in terms of fundamental physical constants, memristive devices represent a promising platform for quantum metrology. Coupling ionics with electronics, memristive devices can exhibit conductance levels quantized in multiples of the fundamental quantum of conductance G(0) = 2e(2)/h. Since the fundamental quantum of conductance G(0) is related only to physical constants that assume fixed value in the revised SI, memristive devices can be exploited for the practical realization of a quantum-based resistance standard that, differently from quantum-Hall based devices conventionally adopted as resistance standards, can operate in different ambient conditions (air, vacuum, harsh environment), in a wide range of temperatures and without the need of an applied magnetic field In this work, the possibility of using memristive devices for quantum metrology is critically discussed, based on recent experimental and theoretical advances on quantum conductance phenomena reported in literature. Thanks to the high operational speed, high scalability down to the nanometer scale, and CMOS compatibility, memristive devices allow on-chip implementation of a resistance standard required for the realization of self-calibrating electrical systems and equipment with zero-chain traceability in accordance with the revised SI.

Memristive Devices for Quantum Metrology / Milano, Gianluca; FERRARESE LUPI, Federico; Fretto, Matteo; Ricciardi, Carlo; DE LEO, Maria; Boarino, Luca. - In: ADVANCED QUANTUM TECHNOLOGIES. - ISSN 2511-9044. - 3:5(2020), p. 2000009. [10.1002/qute.202000009]

Memristive Devices for Quantum Metrology

Gianluca Milano
;
Federico Ferrarese Lupi;Matteo Fretto;Natascia De Leo;Luca Boarino
2020

Abstract

As a consequence of the redefinition of the International System of Units (SI), where units are defined in terms of fundamental physical constants, memristive devices represent a promising platform for quantum metrology. Coupling ionics with electronics, memristive devices can exhibit conductance levels quantized in multiples of the fundamental quantum of conductance G(0) = 2e(2)/h. Since the fundamental quantum of conductance G(0) is related only to physical constants that assume fixed value in the revised SI, memristive devices can be exploited for the practical realization of a quantum-based resistance standard that, differently from quantum-Hall based devices conventionally adopted as resistance standards, can operate in different ambient conditions (air, vacuum, harsh environment), in a wide range of temperatures and without the need of an applied magnetic field In this work, the possibility of using memristive devices for quantum metrology is critically discussed, based on recent experimental and theoretical advances on quantum conductance phenomena reported in literature. Thanks to the high operational speed, high scalability down to the nanometer scale, and CMOS compatibility, memristive devices allow on-chip implementation of a resistance standard required for the realization of self-calibrating electrical systems and equipment with zero-chain traceability in accordance with the revised SI.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/64796
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