In this article, we analyze by modeling two possible mechanisms for magnetization switching using spin-orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrospin model. It is shown that although the field-free deterministic switching caused by a tilt of the anisotropy is more robust than the bias field in the development of memory elements, a compromise between requirements has to be adopted when selecting the parameters for specific applications.

A comparison of two different mechanisms for deterministic spin orbit torque magnetization switching / Garcia-Sanchez, F.; Soares, G.; Pasquale, M.. - In: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. - ISSN 0304-8853. - 508(2020), p. 166700. [10.1016/j.jmmm.2020.166700]

A comparison of two different mechanisms for deterministic spin orbit torque magnetization switching

Soares, G.
Investigation
;
Pasquale, M.
Writing – Review & Editing
2020

Abstract

In this article, we analyze by modeling two possible mechanisms for magnetization switching using spin-orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrospin model. It is shown that although the field-free deterministic switching caused by a tilt of the anisotropy is more robust than the bias field in the development of memory elements, a compromise between requirements has to be adopted when selecting the parameters for specific applications.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/61885
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