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EnglishIn this article, we analyze by modeling two possible mechanisms for magnetization switching using spin-orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrospin model. It is shown that although the field-free deterministic switching caused by a tilt of the anisotropy is more robust than the bias field in the development of memory elements, a compromise between requirements has to be adopted when selecting the parameters for specific applications.
A comparison of two different mechanisms for deterministic spin orbit torque magnetization switching / Garcia-Sanchez, F.; Soares, G.; Pasquale, M.. - In: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. - ISSN 0304-8853. - 508(2020), p. 166700. [10.1016/j.jmmm.2020.166700]
| Titolo: | A comparison of two different mechanisms for deterministic spin orbit torque magnetization switching | |
| Autori: | ||
| Data di pubblicazione: | 2020 | |
| Rivista: | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.jmmm.2020.166700 | |
| Abstract: | In this article, we analyze by modeling two possible mechanisms for magnetization switching using... spin-orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrospin model. It is shown that although the field-free deterministic switching caused by a tilt of the anisotropy is more robust than the bias field in the development of memory elements, a compromise between requirements has to be adopted when selecting the parameters for specific applications. | |
| Full-text (pubblici): | open | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11696/61885
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