METRICA, l’archivio istituzionale della produzione scientifica dell’Istituto Nazionale di Ricerca Metrologica, ha lo scopo di raccogliere, documentare, conservare e pubblicare, anche ad accesso aperto, i prodotti della ricerca dell’Ente.
METRICA utilizza la piattaforma IRIS (Institutional Research Information System) sviluppata da Cineca.
EnglishA mathematical approach is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the v=2 plateau ( RH approx 12906 Ω) and take the form: a/b RH. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene devices with multiple source and drain terminals.
Analytical determination of atypical quantized resistances in graphene p-n junctions / Rigosi, Albert F.; Marzano, Martina; Levy, Antonio; Hill, Heather M.; Patel, Dinesh K.; Kruskopf, Mattias; Jin, Hanbyul; Elmquist, Randolph E.; Newell, David B.. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - 582(2020), p. 411971. [10.1016/j.physb.2019.411971]
| Titolo: | Analytical determination of atypical quantized resistances in graphene p-n junctions | |
| Autori: | ||
| Data di pubblicazione: | 2020 | |
| Rivista: | PHYSICA. B, CONDENSED MATTER | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.physb.2019.411971 | |
| Abstract: | A mathematical approach is introduced for predicting quantized resistances in graphene p-n juncti...on devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the v=2 plateau ( RH approx 12906 Ω) and take the form: a/b RH. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene devices with multiple source and drain terminals. | |
| Full-text (pubblici): | restricted | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 1-s2.0-S092145261930849X-main.pdf | Versione editoriale | Non Pubblico - Accesso privato/ristretto | Utenti riconosciuti Richiedi una copia |
http://hdl.handle.net/11696/61069
Copyright © 2021