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EnglishThe sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm–680 nm).
| Titolo: | Silicon nanocluster sensitization of erbium ions under low-energy optical excitation |
| Autori: | |
| Data di pubblicazione: | 2012 |
| Rivista: | |
| Abstract: | The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm–680 nm). |
| Handle: | http://hdl.handle.net/11696/56981 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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