The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm–680 nm).

Silicon nanocluster sensitization of erbium ions under low-energy optical excitation / Prtljaga, Nikola; Navarro-Urrios, Daniel; Pitanti, Alessandro; Ferrarese-Lupi, Federico; Garrido, Blas; Pavesi, Lorenzo. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 111:9(2012), p. 094314.

Silicon nanocluster sensitization of erbium ions under low-energy optical excitation

Ferrarese-Lupi, Federico;
2012

Abstract

The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm–680 nm).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/56981
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