The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5, 620.3, 630.7, and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order autocorrelation emission functions, by means of Hanbury-Brown and Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence on the polarization of the excitation radiation with ∼45% contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photophysical properties to the already well-known Si–V and Ge–V emitters, thus, providing results of interest from both the fundamental and applicative points of view.

Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation / Tchernij, S. Ditalia; Herzig, T.; Forneris, J.; Küpper, J.; Pezzagna, S.; Traina, P.; Moreva, Ekaterina; Degiovanni, I. P.; Brida, G.; Skukan, N.; Genovese, M.; Jakšić, M.; Meijer, J.; Olivero, P.. - In: ACS PHOTONICS. - ISSN 2330-4022. - 4:10(2017), pp. 2580-2586. [10.1021/acsphotonics.7b00904]

Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation

Traina, P.;MOREVA, EKATERINA;Degiovanni, I. P.;Brida, G.;Genovese, M.;
2017

Abstract

The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5, 620.3, 630.7, and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order autocorrelation emission functions, by means of Hanbury-Brown and Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence on the polarization of the excitation radiation with ∼45% contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photophysical properties to the already well-known Si–V and Ge–V emitters, thus, providing results of interest from both the fundamental and applicative points of view.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/56893
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