Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.
Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach / D'Ortenzi, L.; Monsu, R.; Cara, E.; Fretto, Matteo Andrea; Kara, S.; Rezvani, S. J.; Boarino, Luca. - In: NANOSCALE RESEARCH LETTERS. - ISSN 1556-276X. - 11(2016).
Titolo: | Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach |
Autori: | |
Data di pubblicazione: | 2016 |
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Citazione: | Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach / D'Ortenzi, L.; Monsu, R.; Cara, E.; Fretto, Matteo Andrea; Kara, S.; Rezvani, S. J.; Boarino, Luca. - In: NANOSCALE RESEARCH LETTERS. - ISSN 1556-276X. - 11(2016). |
Handle: | http://hdl.handle.net/11696/54798 |
Appare nelle tipologie: | 1.1 Articolo in rivista |