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EnglishSilicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.
Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach / D'Ortenzi, L.; Monsu, R.; Cara, E.; Fretto, Matteo Andrea; Kara, S.; Rezvani, S. J.; Boarino, Luca. - In: NANOSCALE RESEARCH LETTERS. - ISSN 1556-276X. - 11(2016). [10.1186/s11671-016-1689-x]
| Titolo: | Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach | |
| Autori: | ||
| Data di pubblicazione: | 2016 | |
| Rivista: | NANOSCALE RESEARCH LETTERS | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1186/s11671-016-1689-x | |
| Abstract: | Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a r...ough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique. | |
| Full-text (pubblici): | none | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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