Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.
Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach / D'Ortenzi, L., Monsu, R., Cara, E., Fretto, M.A., Kara, S., Rezvani, S.J., Boarino, L.. - In: NANOSCALE RESEARCH LETTERS. - ISSN 1556-276X. - 11:(2016). [10.1186/s11671-016-1689-x]
Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
Cara, E.;FRETTO, MATTEO ANDREA;BOARINO, LUCA
2016
Abstract
Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
