Electronic transport properties of porous Si nanowires either with embedded Si quantum dots or with a percolative crystalline path are studied as a function of the temperature for the first time. We show that unlike bulk porous Si, the predesigned structure of the wires results in a single distinct conduction mechanism such as tunneling in the former case and variable range hopping in the latter case. We demonstrate that the geometry of the systems with a large internal surface area and high density of the Si quantum dots have a significant conduction enhancement compared to bulk porous silicon. These results can also improve the understanding of the basis of the different electronic transport mechanisms reported in bulk porous silicon.

Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots / Rezvani, S. J.; Pinto, N.; Enrico, E.; D'Ortenzi, L.; Chiodoni, A.; Boarino, L.. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - 49:10(2016). [10.1088/0022-3727/49/10/105104]

Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots

ENRICO, EMANUELE;BOARINO, LUCA
2016

Abstract

Electronic transport properties of porous Si nanowires either with embedded Si quantum dots or with a percolative crystalline path are studied as a function of the temperature for the first time. We show that unlike bulk porous Si, the predesigned structure of the wires results in a single distinct conduction mechanism such as tunneling in the former case and variable range hopping in the latter case. We demonstrate that the geometry of the systems with a large internal surface area and high density of the Si quantum dots have a significant conduction enhancement compared to bulk porous silicon. These results can also improve the understanding of the basis of the different electronic transport mechanisms reported in bulk porous silicon.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/54796
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