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EnglishWe report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at T >= 550 degrees C the growth is hindered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation. (C) 2015 Elsevier B.V. All rights reserved.
Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures / Rezvani, S. J.; Favre, L.; Celegato, F.; Boarino, L.; Berbezier, I.; Pinto, N.. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 436(2016), pp. 51-55.
| Titolo: | Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures |
| Autori: | |
| Data di pubblicazione: | 2016 |
| Rivista: | |
| Citazione: | Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures / Rezvani, S. J.; Favre, L.; Celegato, F.; Boarino, L.; Berbezier, I.; Pinto, N.. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 436(2016), pp. 51-55. |
| Handle: | http://hdl.handle.net/11696/54794 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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