We explore the prospects of wafer-scale inductive probing of the critical current density j(c0) for spin-transfer torque (STT) switching of CoFeB/MgO/CoFeB magnetic tunnel junctions with varying MgO thickness. From inductive measurements, magnetostatic parameters and effective damping are derived and j(c0) is calculated based on STT equations. The inductive values compare well with the values derived from current-induced switching measurements on individual nanopillars. Using a wafer-scale inductive probe head could enable wafer probe station-based metrology of j(c0) in the future.

Toward Wafer Scale Inductive Characterization of Spin-Transfer Torque Critical Current Density of Magnetic Tunnel Junction Stacks / Sievers, S; Liebing, N; Serrano-Guisan, S; Ferreira, R; Paz, E; Caprile, A; Manzin, A; Pasquale, M; Skowronski, W; Stobiecki, T; Rott, K; Reiss, G; Langer, J; Ocker, ; Schumacher, Hw. - In: IEEE TRANSACTIONS ON MAGNETICS. - ISSN 0018-9464. - 51:Issue: 1, Article number: 1400804(2015). [10.1109/TMAG.2014.2357808]

Toward Wafer Scale Inductive Characterization of Spin-Transfer Torque Critical Current Density of Magnetic Tunnel Junction Stacks

MANZIN, ALESSANDRA;PASQUALE, MASSIMO;
2015

Abstract

We explore the prospects of wafer-scale inductive probing of the critical current density j(c0) for spin-transfer torque (STT) switching of CoFeB/MgO/CoFeB magnetic tunnel junctions with varying MgO thickness. From inductive measurements, magnetostatic parameters and effective damping are derived and j(c0) is calculated based on STT equations. The inductive values compare well with the values derived from current-induced switching measurements on individual nanopillars. Using a wafer-scale inductive probe head could enable wafer probe station-based metrology of j(c0) in the future.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/52383
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