heoretical and experimental analysis of electron transport across ultrathin, homogeneously disordered oxide layers is presented with particular regard to the question of how much the effects are universal. We show that (i) distribution of transparencies across dirty subnanometer-thick insulating films is bimodal and (ii) conductance-voltage characteristics of oxide layers with thicknesses increased up to several nanometers are power functions with an index near 1.3. The universality of transport properties is explained as an effect of strong local barrier-height fluctuations generated by the presence of oxygen vacancies
Universality of charge transport across disordered nanometer-thick oxide films / Belogolovskii, M; Lacquaniti, Vincenzo. - Volume 145:(2014), pp. 207-213. (Intervento presentato al convegno 12th International Symposium on Frontiers of Fundamental Physics, FFP 2011; tenutosi a Udine nel November 2011) [10.1007/978-3-319-00297-2_21].
Universality of charge transport across disordered nanometer-thick oxide films
LACQUANITI, VINCENZO
2014
Abstract
heoretical and experimental analysis of electron transport across ultrathin, homogeneously disordered oxide layers is presented with particular regard to the question of how much the effects are universal. We show that (i) distribution of transparencies across dirty subnanometer-thick insulating films is bimodal and (ii) conductance-voltage characteristics of oxide layers with thicknesses increased up to several nanometers are power functions with an index near 1.3. The universality of transport properties is explained as an effect of strong local barrier-height fluctuations generated by the presence of oxygen vacanciesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
