Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5 x 10(-9)d(220) was achieved and the silicon d(220) was determined to 3 x 10(-8)d(220) accuracy. The measured value is d(220) = (192015.551 +/- 0.005) fm. After correction for the impurity-induced lattice strain, d(220) = (192015.569 +/- 0.006) fm was obtained.
THE (220) LATTICE SPACING OF SILICON / Basile, G; Bergamin, A; Cavagnero, G; Mana, Giovanni; Vittone, E; Zosi, G.. - In: IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. - ISSN 0018-9456. - 44:2(1995), pp. 526-529. [10.1109/19.377898]
THE (220) LATTICE SPACING OF SILICON
MANA, GIOVANNI;
1995
Abstract
Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5 x 10(-9)d(220) was achieved and the silicon d(220) was determined to 3 x 10(-8)d(220) accuracy. The measured value is d(220) = (192015.551 +/- 0.005) fm. After correction for the impurity-induced lattice strain, d(220) = (192015.569 +/- 0.006) fm was obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
