The aim of the present paper is to report first results on an innovative method for producing Si/SiO2 nanocomposites. Starting from a porous oxide structure, we infiltrated Si by Chemical Vapour Deposition of SiH4, under controlled conditions. In this way, we succeeded in infiltrating Si into the SiO2 template. Porous oxide is obtained by dry oxidation of mesoporous Si. By means of the electrochemical process used for producing porous Si, an interconnected pore structure is obtained. This allows for Si infiltration, giving rise, in principle, to an interconnected network of Si crystallites, in which electrical carriers are easily driven. Efficient charge injection in Si nanocrystals is of crucial importance for several applications, from electroluminescence to memory devices.

Si/SiO2 nanocomposite by CVD infiltration of porous SiO2 / Amato, Giampiero; Borini, S; Rossi, ANDREA MARIO; Boarino, Luca; Rocchia, M.. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - 202:8(2005), pp. 1529-1532. [10.1002/pssa.200461172]

Si/SiO2 nanocomposite by CVD infiltration of porous SiO2

AMATO, GIAMPIERO;ROSSI, ANDREA MARIO;BOARINO, LUCA;
2005

Abstract

The aim of the present paper is to report first results on an innovative method for producing Si/SiO2 nanocomposites. Starting from a porous oxide structure, we infiltrated Si by Chemical Vapour Deposition of SiH4, under controlled conditions. In this way, we succeeded in infiltrating Si into the SiO2 template. Porous oxide is obtained by dry oxidation of mesoporous Si. By means of the electrochemical process used for producing porous Si, an interconnected pore structure is obtained. This allows for Si infiltration, giving rise, in principle, to an interconnected network of Si crystallites, in which electrical carriers are easily driven. Efficient charge injection in Si nanocrystals is of crucial importance for several applications, from electroluminescence to memory devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/32627
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