Bipolar resistive switching Memories based on metal oxides offer a great potential in terms of Simple process integration, memory performance, and scalability. In view of ultrahigh density memory applications, a reduced device size is not the only requirement, as the distance between different devices is a key parameter. By exploiting a bottom-up fabrication approach based on block copolymer self-assembling, we obtained the parallel production of bilayer Pt/Ti top electrodes arranged in periodic arrays Over the HfO2/TiN surface, building:memory devices with a diameter of 28 nm and a density of 5 x 10(10) devices/cm(2). For an electrical characterization, the sharp conducting tip of an atomic force microscope was adopted for a selective addressing of the nanodevices. The presence of devices showing high Conductance in the initial state was directly connected with scattered leakage current paths in the bare Oxide film, while with bipolar voltage operations we obtained-reversible set/reset transitions irrespective of the conductance variability in the initial state. finally, we disclosed a scalability limit for ultrahigh density memory arrays based on continuous HfO2 thin films, in Which a cross-talk between distinct nanodevices can occur during both set and reset transitions.

Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly / Frascaroli, J; Brivio, S; Lupi, F. F.; Seguini, G; Boarino, Luca; Perego, M; Spiga, S.. - In: ACS NANO. - ISSN 1936-0851. - 9:3(2015), pp. 2518-2529. [10.1021/nn505131b]

Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly

Lupi F. F.;Boarino, Luca;
2015

Abstract

Bipolar resistive switching Memories based on metal oxides offer a great potential in terms of Simple process integration, memory performance, and scalability. In view of ultrahigh density memory applications, a reduced device size is not the only requirement, as the distance between different devices is a key parameter. By exploiting a bottom-up fabrication approach based on block copolymer self-assembling, we obtained the parallel production of bilayer Pt/Ti top electrodes arranged in periodic arrays Over the HfO2/TiN surface, building:memory devices with a diameter of 28 nm and a density of 5 x 10(10) devices/cm(2). For an electrical characterization, the sharp conducting tip of an atomic force microscope was adopted for a selective addressing of the nanodevices. The presence of devices showing high Conductance in the initial state was directly connected with scattered leakage current paths in the bare Oxide film, while with bipolar voltage operations we obtained-reversible set/reset transitions irrespective of the conductance variability in the initial state. finally, we disclosed a scalability limit for ultrahigh density memory arrays based on continuous HfO2 thin films, in Which a cross-talk between distinct nanodevices can occur during both set and reset transitions.
2015
partially_open
File in questo prodotto:
File Dimensione Formato  
2015_ACS_Nano_ResSwitching_EditorialVersion.pdf

non disponibili

Tipologia: Versione editoriale
Licenza: Non Pubblico - Accesso privato/ristretto
Dimensione 6.48 MB
Formato Adobe PDF
6.48 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
2015_ACS_Nano_ResSwitching_SubmittedVersion.pdf

accesso aperto

Tipologia: Documento in Pre-print
Licenza: Pubblico - Tutti i diritti riservati
Dimensione 1.81 MB
Formato Adobe PDF
1.81 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/31836
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 70
  • ???jsp.display-item.citation.isi??? 68
social impact