A chemical model is proposed to explain the passivation of carriers upon etching and their reactivation by the presence of gases in p+-type mesoporous silicon (m-PS). The model is based on the results obtained by means of FTIR, EPR, NMR spectroscopies and ab-initio calculations. This chemical description accounts for the behaviour of mPS when contacted with NO2 or NH3. B atoms in subsurface location play a promi- nent role.
Titolo: | Boron passivation and its reactivation in mesoporous silicon: a "chemical" model |
Autori: | |
Data di pubblicazione: | 2005 |
Rivista: | |
Abstract: | A chemical model is proposed to explain the passivation of carriers upon etching and their reactivation by the presence of gases in p+-type mesoporous silicon (m-PS). The model is based on the results obtained by means of FTIR, EPR, NMR spectroscopies and ab-initio calculations. This chemical description accounts for the behaviour of mPS when contacted with NO2 or NH3. B atoms in subsurface location play a promi- nent role. |
Handle: | http://hdl.handle.net/11696/31609 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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