Submicron Josephson devices are of a particular interest to the emerging field of quantum information, nanosized superconducting quantum interference devices (nano-SQUID) fabrication, AC voltage synthesis circuits for quantum metrology, etc. In this paper, we report on the development of our tech- nology for producing non-hysteretic Nb/A–AlO x –Nb four-layered junctions with a diverse range of submicron dimensions, based on the focused ion beam (FIB) sculpting technique. We observed essential modifications of the main electrical characteristics as a result of the shrinking of the junction area, and relate them to the changes of the buried Nb/Al interface. We show that the electrical parameters-versus-temperature dependence can provide informa- tion on the quality of the junction interfaces. This aspect could be useful to better control of the entire fabrication process, allowing a further large-scale integration of Josephson nanodevices with improved transport characteristics.
Controlling the interface properties of submicrometric Nb/Al-AlOx-Nb Josephson junctions / Lacquaniti, V; DE LEO, Maria; Fretto, MATTEO ANDREA; Cassiago, Cristina; Rocci, R; Sosso, Andrea; Belogolovskii, M.. - In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY. - ISSN 1051-8223. - 25:3(2015). [10.1109/TASC.2014.2367232]
Controlling the interface properties of submicrometric Nb/Al-AlOx-Nb Josephson junctions
DE LEO, MARIA;FRETTO, MATTEO ANDREA;CASSIAGO, CRISTINA;ROCCI R;SOSSO, ANDREA;
2015
Abstract
Submicron Josephson devices are of a particular interest to the emerging field of quantum information, nanosized superconducting quantum interference devices (nano-SQUID) fabrication, AC voltage synthesis circuits for quantum metrology, etc. In this paper, we report on the development of our tech- nology for producing non-hysteretic Nb/A–AlO x –Nb four-layered junctions with a diverse range of submicron dimensions, based on the focused ion beam (FIB) sculpting technique. We observed essential modifications of the main electrical characteristics as a result of the shrinking of the junction area, and relate them to the changes of the buried Nb/Al interface. We show that the electrical parameters-versus-temperature dependence can provide informa- tion on the quality of the junction interfaces. This aspect could be useful to better control of the entire fabrication process, allowing a further large-scale integration of Josephson nanodevices with improved transport characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
