In this paper a new C-MOS compatible fabrication process is presented for a nitrogen dioxide porous silicon (PS) sensor. Electrically insulated PS sensing layers and even free-standing PS membranes have been obtained by front side electrochemical micromachining, reducing in this way electrical leakage towards the crystalline substrate. The electrical behavior of the device in a controlled environment was measured by means of a volt-amperometric technique at constant bias. A huge variation of the current was detected at RT for NO2 concentrations as low as 200 ppb (DeltaG/G = 111). The interference of humidity, ethanol, methanol, CO and ozone is also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
Front-side micromachined porous silicon nitrogen dioxide gas sensor / Baratto, C; Faglia, G; Sberveglieri, G; Boarino, Luca; Rossi, ANDREA MARIO; Amato, Giampiero. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 391:2(2001), pp. 261-264. [10.1016/S0040-6090(01)00992-0]
Front-side micromachined porous silicon nitrogen dioxide gas sensor
BOARINO, LUCA;ROSSI, ANDREA MARIO;AMATO, GIAMPIERO
2001
Abstract
In this paper a new C-MOS compatible fabrication process is presented for a nitrogen dioxide porous silicon (PS) sensor. Electrically insulated PS sensing layers and even free-standing PS membranes have been obtained by front side electrochemical micromachining, reducing in this way electrical leakage towards the crystalline substrate. The electrical behavior of the device in a controlled environment was measured by means of a volt-amperometric technique at constant bias. A huge variation of the current was detected at RT for NO2 concentrations as low as 200 ppb (DeltaG/G = 111). The interference of humidity, ethanol, methanol, CO and ozone is also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
