The high sensitivity of a room-temperature porous silicon NO(2) sensor has required an investigation of surface dynamics between NO(2) and mesoporous silicon. By means of electrical measurements in gas atmosphere and in-situ FTIR, evidence of a new interaction mechanism strongly affecting the electrical conductivity of the porous silicon (PS) sensors has been found. Absorption bands have been attributed to NO(2)(-), suggesting carrier transfer from the silicon wires to NO(2), thanks to its high electronic affinity. The models proposed until now, explaining the high resistivity of mesoporous silicon, strongly support this interpretation.
Towards a deeper comprehension of the interaction mechanisms between mesoporous silicon and NO2 / Boarino, Luca; Rocchia, M; Baratto, C; Rossi, ANDREA MARIO; Garrone, E; Borini, S; Geobaldo, F; Comini, E; Faglia, G; Sberveglieri, G; Amato, Giampiero. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - 182:1(2000), pp. 465-471. [10.1002/1521-396X(200011)182:1<465::AID-PSSA465>3.0.CO;2-G]
Towards a deeper comprehension of the interaction mechanisms between mesoporous silicon and NO2
BOARINO, LUCA;ROSSI, ANDREA MARIO;AMATO, GIAMPIERO
2000
Abstract
The high sensitivity of a room-temperature porous silicon NO(2) sensor has required an investigation of surface dynamics between NO(2) and mesoporous silicon. By means of electrical measurements in gas atmosphere and in-situ FTIR, evidence of a new interaction mechanism strongly affecting the electrical conductivity of the porous silicon (PS) sensors has been found. Absorption bands have been attributed to NO(2)(-), suggesting carrier transfer from the silicon wires to NO(2), thanks to its high electronic affinity. The models proposed until now, explaining the high resistivity of mesoporous silicon, strongly support this interpretation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
