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EnglishA cobalt-copper top spin valve was prepared by thermal evaporation of a stack of ferromagnetic thin films separated by thin layers of the diamagnetic metal, with a cap layer containing an antiferromagnetic (AFM) exchange-biasing material. A nonconventional top AFM layer was used, in order to optimize the multilayer roughness and to avoid electrical interference with metallic layers; it consists of a composite material easily processed by means of optical lithography, basically a polymeric matrix composite with a dispersion of nickel oxide microparticles. Magnetization and magnetoresistance measurements were performed from 4 to 300 K. The measurements of both quantities indicate random pinning action of the top AFM layer, resulting in a small exchange-bias field and in asymmetric magnetization and magnetoresistance curves. A simple model explains the observed physical effects.
Thermally evaporated Cu-Co top spin vale with random exchange bias / Chiolerio A; Allia P; Chiodoni A; Pirri F; Celegato F; Coisson M. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 101(2007), pp. 123915-1-123915-6. [10.1063/1.2749289]
| Titolo: | Thermally evaporated Cu-Co top spin vale with random exchange bias | |
| Autori: | ||
| Data di pubblicazione: | 2007 | |
| Rivista: | JOURNAL OF APPLIED PHYSICS | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.2749289 | |
| Abstract: | A cobalt-copper top spin valve was prepared by thermal evaporation of a stack of ferromagnetic th...in films separated by thin layers of the diamagnetic metal, with a cap layer containing an antiferromagnetic (AFM) exchange-biasing material. A nonconventional top AFM layer was used, in order to optimize the multilayer roughness and to avoid electrical interference with metallic layers; it consists of a composite material easily processed by means of optical lithography, basically a polymeric matrix composite with a dispersion of nickel oxide microparticles. Magnetization and magnetoresistance measurements were performed from 4 to 300 K. The measurements of both quantities indicate random pinning action of the top AFM layer, resulting in a small exchange-bias field and in asymmetric magnetization and magnetoresistance curves. A simple model explains the observed physical effects. | |
| Full-text (pubblici): | none | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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