The present paper deals with incomplete oxidation of mesoporous Si, in order to produce a nearly compact SiO2 layer with Si crystals embedded in it. This is achieved by properly selecting the porosity, pores and nanocrystal sizes characterizing the starting layer. After oxidation in an O-2 atmosphere at 1000 degrees C, a well controlled oxide layer is formed. A model was used to predict, starting from transmission electron microscopy observation, the oxide thickness and the sizes of the residual nanocrystals. Intense photoluminescence in the visible region was observed, even in samples with a low starting porosity, and a correlation between the nanocrystal sizes and the emission wavelength is found.
Observation of quantum-confined luminescence in partially oxidized porous silicon / Amato, Giampiero; Boarino, Luca; Midellino, D; Rossi, ANDREA MARIO. - In: PHILOSOPHICAL MAGAZINE. B. - ISSN 1463-6417. - 80:4(2000), pp. 679-689. [10.1080/13642810008209775]
Observation of quantum-confined luminescence in partially oxidized porous silicon
AMATO, GIAMPIERO;BOARINO, LUCA;ROSSI, ANDREA MARIO
2000
Abstract
The present paper deals with incomplete oxidation of mesoporous Si, in order to produce a nearly compact SiO2 layer with Si crystals embedded in it. This is achieved by properly selecting the porosity, pores and nanocrystal sizes characterizing the starting layer. After oxidation in an O-2 atmosphere at 1000 degrees C, a well controlled oxide layer is formed. A model was used to predict, starting from transmission electron microscopy observation, the oxide thickness and the sizes of the residual nanocrystals. Intense photoluminescence in the visible region was observed, even in samples with a low starting porosity, and a correlation between the nanocrystal sizes and the emission wavelength is found.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
