We have analyzed numerically two different mechanism of magnetization switching using spin orbit torques created by in-plane currents passing through an adjacent normal metal layer. The analyzed mechanisms (tilted anisotropy and exchange biased film) have the particularity that they can achieve deterministic switching without additional in-plane fields. We have focused in the thermal stability, which is determined by the energy barrier, the critical currents for switching and the switching time as function of the pulse. The calculations were made using the macrospin approach and have shown that the exchange biased films are less attractive for applications due to the sensitivity to pulse duration and lower energy barriers.

Comparison of two different mechanisms for deterministic switching with Spin Orbit torques / Garcia-Sanchez, F.; Soares, Gabriel; Pasquale, Massimo. - (2017), pp. 33-33. ((Intervento presentato al convegno 11th INTERNATIONAL SYMPOSIUM ON HYSTERESIS MODELING AND MICROMAGNETICS tenutosi a Barcellona nel 29-31 Maggio 2017.

Comparison of two different mechanisms for deterministic switching with Spin Orbit torques

GARCIA SANCHEZ, FELIPE
;
SOARES, GABRIEL;Massimo Pasquale
2017

Abstract

We have analyzed numerically two different mechanism of magnetization switching using spin orbit torques created by in-plane currents passing through an adjacent normal metal layer. The analyzed mechanisms (tilted anisotropy and exchange biased film) have the particularity that they can achieve deterministic switching without additional in-plane fields. We have focused in the thermal stability, which is determined by the energy barrier, the critical currents for switching and the switching time as function of the pulse. The calculations were made using the macrospin approach and have shown that the exchange biased films are less attractive for applications due to the sensitivity to pulse duration and lower energy barriers.
11th INTERNATIONAL SYMPOSIUM ON HYSTERESIS MODELING AND MICROMAGNETICS
29-31 Maggio 2017
Barcellona
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/57225
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