The convergence of photonics and microelectronics within a single chip is still lacking of a monolithical on-chip optical amplifier. Rare-earth doped slot waveguides show a large potential as on-chip source. Slot waveguides with silicon nanocrystals embedded in a dielectric host matrix can increase the light confinement in the active layer and allow electrical injection. In this work, horizontal slot waveguides formed by two thick silicon layers separated by a thin erbium doped silicon rich silicon oxide layer are studied as on-chip optical amplifiers. The waveguides are grown in a CMOS line with the active material grown by low-pressure chemical vapor deposition. Optical tests are performed and light propagation in the slot waveguides is observed. Using the cut-back technique, spectra propagation losses are evaluated. Room temperature electroluminescence is observed at 1.54 μm. Transmitted optical signal resonant with Er absorption is studied as a function of the injected current for different probing laser wavelengths.

Opto-electrical characterization of erbium-doped slot waveguides / Tengattini, Andrea; Gandolfi, Davide; Marconi, Alessandro; Anopchenko, Oleksiy; Prtljaga, Nikola; Ramirez, Joan Manel; Ferrarese Lupi, Federico; Berencen, Yonder; Navarro Urrios, Daniel; Garrido, Blas; Fedeli, Jean-Marc; Rivallin, Pierrette; Surana, Kavita; Pavesi, Lorenzo. - 8431(2012), p. 843118.

Opto-electrical characterization of erbium-doped slot waveguides

Ferrarese Lupi, Federico;
2012

Abstract

The convergence of photonics and microelectronics within a single chip is still lacking of a monolithical on-chip optical amplifier. Rare-earth doped slot waveguides show a large potential as on-chip source. Slot waveguides with silicon nanocrystals embedded in a dielectric host matrix can increase the light confinement in the active layer and allow electrical injection. In this work, horizontal slot waveguides formed by two thick silicon layers separated by a thin erbium doped silicon rich silicon oxide layer are studied as on-chip optical amplifiers. The waveguides are grown in a CMOS line with the active material grown by low-pressure chemical vapor deposition. Optical tests are performed and light propagation in the slot waveguides is observed. Using the cut-back technique, spectra propagation losses are evaluated. Room temperature electroluminescence is observed at 1.54 μm. Transmitted optical signal resonant with Er absorption is studied as a function of the injected current for different probing laser wavelengths.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11696/56979
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