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EnglishWe introduce a device that simulates a low-valued resistance standard (shunt) that can be employed as a metrology-grade travelling standard, for the traceability transfer of dc resistance in the low range, and in laboratory intercomparisons. The device is composed of a direct-current current comparator (DCCT) and a mid-range resistance standard. A prototype having a nominal resistance of 10m Ω has been constructed. Experiments show that it can be measured with high-accuracy commercial dc resistance bridges in their default operating configurations. The power coefficient is much lower than a corresponding shunt of the same nominal resistance. The expected long-term and transport stability is a few parts in 106 or better.
Simulated shunts as dc low-resistance travelling standards / CALLEGARO L; CASSIAGO C; GASPAROTTO E. - (2015), pp. 302-305. ((Intervento presentato al convegno IEEE 1st International Forum on Research and Tecnologies for Society and Industry Leveraging a better tomorrow (RTSI) tenutosi a Turin nel 16-18 Sept. 2015 [10.1109/RTSI.2015.7325115].
| Titolo: | Simulated shunts as dc low-resistance travelling standards | |
| Autori: | ||
| Data di pubblicazione: | 2015 | |
| Nome del convegno: | IEEE 1st International Forum on Research and Tecnologies for Society and Industry Leveraging a better tomorrow (RTSI) | |
| Luogo del convegno: | Turin | |
| Anno del convegno: | 16-18 Sept. 2015 | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/RTSI.2015.7325115 | |
| Abstract: | We introduce a device that simulates a low-valued resistance standard (shunt) that can be employe...d as a metrology-grade travelling standard, for the traceability transfer of dc resistance in the low range, and in laboratory intercomparisons. The device is composed of a direct-current current comparator (DCCT) and a mid-range resistance standard. A prototype having a nominal resistance of 10m Ω has been constructed. Experiments show that it can be measured with high-accuracy commercial dc resistance bridges in their default operating configurations. The power coefficient is much lower than a corresponding shunt of the same nominal resistance. The expected long-term and transport stability is a few parts in 106 or better. | |
| Full-text (pubblici): | restricted | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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| ConfProc-RTSI2015_07325115.pdf | Atto di congresso | Versione editoriale | Non Pubblico - Accesso privato/ristretto | Utenti riconosciuti Richiedi una copia |
http://hdl.handle.net/11696/32984
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