Transition-edge sensor (TES) microcalorimeters are extensively used as single photon detectors from infrared to x-ray. Their good energy resolution and photon number resolving capability at visible and near-infrared wavelengths make them powerful tools for quantum information and quantum computation. In this work we report details on the fabrication of Ti/Pd TESs deposited by e-beam evaporation on silicon nitride substrates. By the proximity effect between Ti and Pd, the Ti critical temperature was tuned down to 100 mK, usual working temperature for these devices. Sharp transition of two-three mK and reproducible Tc were obtained. The Pd material can be a valid alternative to widely used Au proximity material thanks to its stronger influence on the Ti layer, that allows to obtain the same temperature reduction with thinner layers. Thermal and electrical characteristics of Ti/Au and Ti/Pd bilayers are compared in view of single photon detection.
Characterization and fabrication of Ti/Pd bilayers for transition-edge sensors / Monticone, Eugenio; Taralli, E.; Portesi, Chiara; Fretto, MATTEO ANDREA; Rocci, R.; Cerri, R.; Rajteri, Mauro. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6596. - 150:(2009), pp. 052168.052168-052168.052173. (Intervento presentato al convegno 25th International conference on Low temperature Physics (LT25) tenutosi a Amsterdam, The Netherlands nel 6–13 August 2008) [10.1088/1742-6596/150/5/052168].
Characterization and fabrication of Ti/Pd bilayers for transition-edge sensors
MONTICONE, EUGENIO;PORTESI, CHIARA;FRETTO, MATTEO ANDREA;R. ROCCI;RAJTERI, MAURO
2009
Abstract
Transition-edge sensor (TES) microcalorimeters are extensively used as single photon detectors from infrared to x-ray. Their good energy resolution and photon number resolving capability at visible and near-infrared wavelengths make them powerful tools for quantum information and quantum computation. In this work we report details on the fabrication of Ti/Pd TESs deposited by e-beam evaporation on silicon nitride substrates. By the proximity effect between Ti and Pd, the Ti critical temperature was tuned down to 100 mK, usual working temperature for these devices. Sharp transition of two-three mK and reproducible Tc were obtained. The Pd material can be a valid alternative to widely used Au proximity material thanks to its stronger influence on the Ti layer, that allows to obtain the same temperature reduction with thinner layers. Thermal and electrical characteristics of Ti/Au and Ti/Pd bilayers are compared in view of single photon detection.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
