The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode configurations. The authors observed that the electronic transport along the longitudinal direction (parallel to the sample surface) is strongly inhibited at room temperature but not along the perpendicular direction. They show that such electrical anisotropy can be removed by heating the material, reporting an increase of six orders of magnitude of the longitudinal conductivity when the temperature rises from 20 to 100 °C. These experimental findings are interpreted on the basis of the material morphology and nanostructuration, which determine the availability of percolative pathways for free charge carriers.
Anisotropic resistivity of (100)-oriented mesoporous silicon / Borini, S; Boarino, Luca; Amato, Giampiero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 89:(2006), pp. 132111-132114. [10.1063/1.2357882]
Anisotropic resistivity of (100)-oriented mesoporous silicon
BOARINO, LUCA;AMATO, GIAMPIERO
2006
Abstract
The resistivity of (100) -oriented mesoporous silicon has been studied using two different electrode configurations. The authors observed that the electronic transport along the longitudinal direction (parallel to the sample surface) is strongly inhibited at room temperature but not along the perpendicular direction. They show that such electrical anisotropy can be removed by heating the material, reporting an increase of six orders of magnitude of the longitudinal conductivity when the temperature rises from 20 to 100 °C. These experimental findings are interpreted on the basis of the material morphology and nanostructuration, which determine the availability of percolative pathways for free charge carriers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
