A chemical model is proposed to explain the passivation of carriers upon etching and their reactivation by the presence of gases in p+-type mesoporous silicon (m-PS). The model is based on the results obtained by means of FTIR, EPR, NMR spectroscopies and ab-initio calculations. This chemical description accounts for the behaviour of mPS when contacted with NO2 or NH3. B atoms in subsurface location play a promi- nent role.

Boron passivation and its reactivation in mesoporous silicon: a "chemical" model / Garrone, E; Geobaldo, F; Rivolo, P; Salvador, G. P.; Pallavidino, L; Boarino, Luca; Amato, Giampiero; Giamello, E; Chiesa, M; Gobetto, R; Ugliengo, P.. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - 202:(2005), pp. 1567-1570. [10.1002/pssa.200461184]

Boron passivation and its reactivation in mesoporous silicon: a "chemical" model

BOARINO, LUCA;AMATO, GIAMPIERO;
2005

Abstract

A chemical model is proposed to explain the passivation of carriers upon etching and their reactivation by the presence of gases in p+-type mesoporous silicon (m-PS). The model is based on the results obtained by means of FTIR, EPR, NMR spectroscopies and ab-initio calculations. This chemical description accounts for the behaviour of mPS when contacted with NO2 or NH3. B atoms in subsurface location play a promi- nent role.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/31609
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