The local oxidation of porous silicon (PS), induced by a focused laser beam, could represent an alternative method for patterning PS through direct writing. Important phase changes take place on PS when irradiated by a focused laser beam and moreover a complete confinement of the oxidized areas can be achieved due to the very low thermal conductivity of PS. We present a detailed Fourier Transform Infra- Red (FTIR) study of the irradiated areas to understand the degree of oxidation and the type of oxide ob- tained at different laser powers. An interpretation of the low wavenumber range, below 1300 cm –1, in terms of Fröhlich interactions will be discussed.
Laser local oxidation of porous silicon: a FTIR spectroscopy investigation / Rocchia, M; Rossi, ANDREA MARIO; Borini, S; Boarino, Luca; Amato, Giampiero. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - 202:(2005), pp. 1658-1661. [10.1002/pssa.200461213]
Laser local oxidation of porous silicon: a FTIR spectroscopy investigation
ROSSI, ANDREA MARIO;BOARINO, LUCA;AMATO, GIAMPIERO
2005
Abstract
The local oxidation of porous silicon (PS), induced by a focused laser beam, could represent an alternative method for patterning PS through direct writing. Important phase changes take place on PS when irradiated by a focused laser beam and moreover a complete confinement of the oxidized areas can be achieved due to the very low thermal conductivity of PS. We present a detailed Fourier Transform Infra- Red (FTIR) study of the irradiated areas to understand the degree of oxidation and the type of oxide ob- tained at different laser powers. An interpretation of the low wavenumber range, below 1300 cm –1, in terms of Fröhlich interactions will be discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
